DIODE GEN PURP 100V 2.5A DO216
Part | Technology | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology UPR10E3/TR13 | Standard | 200 mA, 500 ns | Surface Mount | 975 mV | DO-216AA | DO-216 | 25 ns | 100 V | 2 µA | 150 °C | -55 °C |
Microchip Technology UPR10E3/TR7 | |||||||||||
Microchip Technology UPR10/TR13 | Standard | 200 mA, 500 ns | Surface Mount | 975 mV | DO-216AA | DO-216 | 25 ns | 100 V | 2 µA | 150 °C | -55 °C |
Microchip Technology UPR10E3/TR7 | |||||||||||
Microchip Technology UPR10/TR7 | Standard | 200 mA, 500 ns | Surface Mount | 975 mV | DO-216AA | DO-216 | 25 ns | 100 V | 2 µA | 150 °C | -55 °C |
Microchip Technology UPR10E3/TR7 | Standard | 200 mA, 500 ns | Surface Mount | 975 mV | DO-216AA | DO-216 | 25 ns | 100 V | 2 µA | 150 °C | -55 °C |