Specification	SSM3J145TU,LXGF

Current - Continuous Drain (Id) (Ta)	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	4.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Qualification	AEC-Q101
Rds On (Max)	103 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	6 V
Vgs(th) (Max)	1 V

SSM3J145TU Series

Part	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature	Package Name	Vgs(th) (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Grade	Technology	Mounting Type	Qualification	Package / Case	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3J145TU,LXHF	3 A	20 V	103 mOhm	4.5 V	1.5 V	150 °C	UFM	1 V	6 V	-8 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	AEC-Q101	3-SMD Flat Leads	270 pF	P-Channel	4.6 nC	500 mW
Toshiba Semiconductor and Storage SSM3J145TU,LF	3 A	20 V	103 mOhm	4.5 V	1.5 V	150 °C	UFM	1 V	6 V	-8 V		MOSFET (Metal Oxide)	Surface Mount		3-SMD Flat Leads	270 pF	P-Channel	4.6 nC	500 mW
Toshiba Semiconductor and Storage SSM3J145TU,LXGF	3 A	20 V	103 mOhm	4.5 V	1.5 V	150 °C	UFM	1 V	6 V	-8 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	AEC-Q101	3-SMD Flat Leads	270 pF	P-Channel	4.6 nC	500 mW

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