MOSFET P-CH 20V 3A UFM
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Vgs (Max) [Min] | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 270 pF | 20 V | UFM | MOSFET (Metal Oxide) | 4.6 nC | 500 mW | 3 A | 6 V | -8 V | 150 °C | 103 mOhm | P-Channel | 1 V | 1.5 V 4.5 V | Surface Mount |