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IPD90N04S3H4ATMA1 - Infineon Technologies AG-IPD40N03S4L08ATMA1 MOSFETs Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

IPD90N04S3H4ATMA1

NRND
Infineon Technologies

TRANS MOSFET N-CH 40V 90A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK T/R

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IPD90N04S3H4ATMA1 - Infineon Technologies AG-IPD40N03S4L08ATMA1 MOSFETs Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

IPD90N04S3H4ATMA1

NRND
Infineon Technologies

TRANS MOSFET N-CH 40V 90A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD90N04S3H4ATMA1
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds3900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)115 W
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.95

Description

General part information

IPD90 Series

N-Channel 40 V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11

Documents

Technical documentation and resources