IPD90P04P405AUMA2

Obsolete

Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

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IPD90P04P405AUMA2

Obsolete

Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD90P04P405AUMA2

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC
Input Capacitance (Ciss) (Max) @ Vds	10300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPD90 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPD90N06S4L03ATMA1	13000 pF	PG-TO252-3-11	2.2 V	16 V	4.5 V 10 V	90 A	MOSFET (Metal Oxide)	150 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	60 V	N-Channel	3.5 mOhm	170 nC
Infineon Technologies IPD90N06S4L06ATMA2	5680 pF	PG-TO252-3-11	2.2 V	16 V	4.5 V 10 V	90 A	MOSFET (Metal Oxide)	79 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	60 V	N-Channel	6.3 mOhm		AEC-Q101	Automotive	75 nC
Infineon Technologies IPD90N06S407ATMA2		PG-TO252-3-11	4 V	20 V	10 V	90 A	MOSFET (Metal Oxide)	79 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	60 V	N-Channel		56 nC	AEC-Q101	Automotive		6.9 mOhm
Infineon Technologies IPD90R1K2C3BTMA1	710 pF	PG-TO252-3	3.5 V	20 V	10 V	5.1 A	MOSFET (Metal Oxide)	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	150 °C	900 V	N-Channel	1.2 Ohm				28 nC
Infineon Technologies IPD90N03S4L03ATMA1	5100 pF	PG-TO252-3-11	2.2 V	16 V	4.5 V 10 V	90 A	MOSFET (Metal Oxide)	94 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	30 V	N-Channel					75 nC	3.3 mOhm
Infineon Technologies IPD90P04P405AUMA2	10300 pF	PG-TO252-3-313	4 V	20 V	10 V	90 A	MOSFET (Metal Oxide)	125 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	40 V	P-Channel	4.7 mOhm	154 nC
Infineon Technologies IPD90P03P4L04ATMA2	11300 pF	PG-TO252-3-11	2 V			90 A	MOSFET (Metal Oxide)	137 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	30 V	P-Channel	4.1 mOhm		AEC-Q101	Automotive	160 nC		5 V	-16 V
Infineon Technologies IPD90N10S406ATMA1		PG-TO252-3-313	3.5 V	20 V	10 V	90 A	MOSFET (Metal Oxide)	136 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	100 V	N-Channel	6.7 mOhm		AEC-Q101	Automotive	68 nC				4870 pF
Infineon Technologies IPD90N04S3H4ATMA1	3900 pF	PG-TO252-3-11	4 V	20 V	10 V	90 A	MOSFET (Metal Oxide)	115 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	40 V	N-Channel					60 nC
Infineon Technologies IPD90N04S304ATMA1	5200 pF	PG-TO252-3-11	4 V	20 V	10 V	90 A	MOSFET (Metal Oxide)	136 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	175 ░C	40 V	N-Channel	3.6 mOhm	80 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPD90 Series

P-Channel 40 V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313

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