Specification	SI4831DY-T1-E3

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2 W
Rds On (Max)	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

SI4831 Series

Part	Rds On (Max)	Mounting Type	FET Feature	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	FET Type	Vgs(th) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Technology	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4831BDY-T1-GE3	42 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	26 nC	2 W 3.3 W	625 pF	P-Channel	3 V	20 V	6.6 A	30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V
Vishay Dale SI4831DY-T1-E3	45 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	20 nC	2 W		P-Channel	1 V	20 V		30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V	5 A
Vishay Dale SI4831BDY-T1-E3	42 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	26 nC	2 W 3.3 W	625 pF	P-Channel	3 V	20 V	6.6 A	30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V

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