SI4831 Series

Catalog

MOSFET P-CH 30V 6.6A 8SO

Part	Rds On (Max)	Mounting Type	FET Feature	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	FET Type	Vgs(th) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Technology	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4831BDY-T1-GE3	42 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	26 nC	2 W 3.3 W	625 pF	P-Channel	3 V	20 V	6.6 A	30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V
Vishay Dale SI4831DY-T1-E3	45 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	20 nC	2 W		P-Channel	1 V	20 V		30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V	5 A
Vishay Dale SI4831BDY-T1-E3	42 mOhm	Surface Mount	Schottky Diode (Isolated)	8-SOIC	26 nC	2 W 3.3 W	625 pF	P-Channel	3 V	20 V	6.6 A	30 V	MOSFET (Metal Oxide)	0.154 in	3.9 mm	-55 °C	150 °C	10 V	4.5 V