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LITTELFUSE Q8006NH4TP

IRF9Z24SPBF

Active
Vishay Dale

POWER MOSFET, P CHANNEL, 60 V, 11 A, 0.28 OHM, TO-263 (D2PAK), SURFACE MOUNT

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LITTELFUSE Q8006NH4TP

IRF9Z24SPBF

Active
Vishay Dale

POWER MOSFET, P CHANNEL, 60 V, 11 A, 0.28 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Description

General part information

IRF9Z24 Series

The IRF9Z24SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast-switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9Z24SPBF
Current - Continuous Drain (Id) (Tc)11 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)19 nC
Input Capacitance (Ciss) (Max)570 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)60 W, 3.7 W
Rds On (Max)280 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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