
IRF9Z24SPBF
ActivePOWER MOSFET, P CHANNEL, 60 V, 11 A, 0.28 OHM, TO-263 (D2PAK), SURFACE MOUNT

IRF9Z24SPBF
ActivePOWER MOSFET, P CHANNEL, 60 V, 11 A, 0.28 OHM, TO-263 (D2PAK), SURFACE MOUNT
Description
General part information
IRF9Z24 Series
The IRF9Z24SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast-switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9Z24SPBF |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 19 nC |
| Input Capacitance (Ciss) (Max) | 570 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 60 W, 3.7 W |
| Rds On (Max) | 280 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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