Specification	IRF9Z24PBF

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	570 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	60 W
Rds On (Max)	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9Z24 Series

Part	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale IRF9Z24SPBF	P-Channel	Surface Mount	10 V	20 V	19 nC	TO-263 (D2PAK)	570 pF	-55 °C	175 °C	3.7 W 60 W	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	280 mOhm	4 V	11 A
Vishay Dale IRF9Z24STRLPBF	P-Channel	Surface Mount	10 V	20 V	19 nC	TO-263 (D2PAK)	570 pF	-55 °C	175 °C	3.7 W 60 W	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	280 mOhm	4 V	11 A
Vishay Dale IRF9Z24PBF-BE3	P-Channel	Through Hole		20 V	19 nC	TO-220AB	570 pF	-55 °C	175 °C	60 W	60 V	TO-220-3	MOSFET (Metal Oxide)	280 mOhm	4 V	11 A
Vishay Dale IRF9Z24PBF	P-Channel	Through Hole	10 V	20 V	19 nC	TO-220AB	570 pF	-55 °C	175 °C	60 W	60 V	TO-220-3	MOSFET (Metal Oxide)	280 mOhm	4 V	11 A

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