FF200R12KE3B2HOSA1

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IGBT MOD 1200V 295A 1050W

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IGBT MOD 1200V 295A 1050W

Description

General part information

IGBT Module Half Bridge 1200 V 295 A 1050 W Chassis Mount Module

Parameters and characteristics for this part

Specification	FF200R12KE3B2HOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max)	295 A
Current - Collector Cutoff (Max)	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	14 nF
Mounting Type	Chassis Mount
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Package Name	Module
Power - Max	1050 W
Vce(on) (Max)	2.15 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

Part	Configuration	Input	Voltage - Collector Emitter Breakdown (Max)	Input Capacitance (Cies) @ Vce	Mounting Type	Current - Collector (Ic) (Max)	Vce(on) (Max)	Power - Max	Package Name	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Cutoff (Max)	IGBT Type	Channel Count
INFINEON FF200R12KE4HOSA1	Half Bridge	Standard	1200 V	14 nF	Chassis Mount	240 A	2.15 V	1100 W	Module	Module	-40 °C	150 °C	5 mA	Trench Field Stop
INFINEON FF200R12KT4HOSA1	Half Bridge	Standard	1200 V	14 nF	Chassis Mount	320 A	2.15 V	1100 W	Module	Module	-40 °C	150 °C	5 mA	Trench Field Stop
INFINEON FF200R12KE3B2HOSA1	Half Bridge	Standard	1200 V	14 nF	Chassis Mount	295 A	2.15 V	1050 W	Module	Module	-40 °C	125 °C	5 mA
INFINEON FF200R12KT3EHOSA1	Independent	Standard	1200 V	14 nF	Chassis Mount		2.15 V	1050 W	Module	Module	-40 °C	125 °C	5 mA		2
INFINEON FF200R12KS4HOSA1	Independent	Standard	1200 V	13 nF	Chassis Mount	275 A	3.7 V	1400 VA	Module	Module	-40 °C	125 °C	5 mA		2
INFINEON FF200R12KS4PHOSA1	Half Bridge	Standard	1200 V	13 nF	Chassis Mount	275 A	3.7 V	1400 VA	Module	Module	-40 °C	125 °C	5 mA

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