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IGBT MODULE C SERIES

FF200R12KT3EHOSA1

NRND
INFINEON

THE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

IGBT MODULE C SERIES

FF200R12KT3EHOSA1

NRND
INFINEON

THE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

Description

General part information

FF200R12 Series

62 mm1200 V, 200 A Common EmitterIGBT modulewith fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200 V 62 mm dual modules (e.g.FF200R12KT3).

Technical Specifications

Parameters and characteristics for this part

SpecificationFF200R12KT3EHOSA1
Channel Count2
ConfigurationIndependent
Current - Collector Cutoff (Max)5 mA
InputStandard
Input Capacitance (Cies) @ Vce14 nF
Mounting TypeChassis Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Package NameModule
Power - Max1050 W
Vce(on) (Max)2.15 V
Voltage - Collector Emitter Breakdown (Max)1200 V

Pricing

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CAD

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Documents

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