IPU95R450P7AKMA1

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Infineon Technologies

MOSFET N-CH 950V 14A TO251-3

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Infineon Technologies

MOSFET N-CH 950V 14A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU95R450P7AKMA1

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1053 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology
Infineon Technologies IPU95R450P7AKMA1	-55 °C	150 °C	N-Channel	PG-TO251-3	104 W	450 mOhm	1053 pF	Through Hole	20 V	3.5 V	IPAK TO-251-3 Short Leads TO-251AA	35 nC	10 V	14 A	950 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 950 V 14A (Tc) 104W (Tc) Through Hole PG-TO251-3

Technical documentation and resources