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MOSFET N-CH 950V 14A TO251-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | N-Channel | PG-TO251-3 | 104 W | 450 mOhm | 1053 pF | Through Hole | 20 V | 3.5 V | IPAK TO-251-3 Short Leads TO-251AA | 35 nC | 10 V | 14 A | 950 V | MOSFET (Metal Oxide) |