Specification	RN2906FE,LF(CT

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Package Name	ES6
PNP Count	2
Power - Max	100 mW
Resistor - Base (R1) Resistance	4.7 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Pre-Biased, Dual
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN2906 Series

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)

Part	Grade	Frequency - Transition	Package / Case	Resistor - Base (R1) Resistance	Power - Max	PNP Count	Transistor Type	Transistor Configuration	Qualification	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Mounting Type	DC Current Gain (hFE) (Min)	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Package Name	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage RN2906,LXHF(CT	Automotive	200 MHz	6-TSSOP SC-88 SOT-363	4.7 kOhm	200 mW	2	PNP	Dual Pre-Biased	AEC-Q101	300 mV	500 nA	Surface Mount	80	47 kOhm	0.1 mA	US6	50 V
Toshiba Semiconductor and Storage RN2906FE(TE85L,F)		200 MHz	SOT-563 SOT-666	4.7 kOhm	100 mW	2	PNP	Dual Pre-Biased		300 mV	100 nA	Surface Mount	80	47 kOhm	0.1 mA	ES6	50 V
Toshiba Semiconductor and Storage RN2906FE,LF(CT		200 MHz	SOT-563 SOT-666	4.7 kOhm	100 mW	2	PNP	Dual Pre-Biased		300 mV	500 nA	Surface Mount	80	47 kOhm	0.1 mA	ES6	50 V
Toshiba Semiconductor and Storage RN2906,LF		200 MHz	6-TSSOP SC-88 SOT-363	4.7 kOhm	200 mW	2	PNP	Dual Pre-Biased		300 mV	500 nA	Surface Mount	80	47 kOhm	0.1 mA	US6	50 V

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