RN2906FE(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN2906FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ES6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Grade	Current - Collector Cutoff (Max) [Max]	Mounting Type	Qualification	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Toshiba Semiconductor and Storage RN2906,LXHF(CT	47000 Ohms	300 mV	US6	6-TSSOP SC-88 SOT-363	100 mA	4.7 kOhms	Automotive	500 nA	Surface Mount	AEC-Q101	200 MHz	50 V	200 mW	80	2 PNP - Pre-Biased (Dual)
Toshiba Semiconductor and Storage RN2906FE(TE85L,F)	47000 Ohms	300 mV	ES6	SOT-563 SOT-666	100 mA	4.7 kOhms		100 nA	Surface Mount		200 MHz	50 V	100 mW	80	2 PNP - Pre-Biased (Dual)
Toshiba Semiconductor and Storage RN2906FE,LF(CT	47000 Ohms	300 mV	ES6	SOT-563 SOT-666	100 mA	4.7 kOhms		500 nA	Surface Mount		200 MHz	50 V	100 mW	80	2 PNP - Pre-Biased (Dual)

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Technical documentation and resources