BSM080D12P2C008
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 80 A, 1.2 KV, MODULE
BSM080D12P2C008
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 80 A, 1.2 KV, MODULE
Description
General part information
BSM080D12P2C008 Series
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM080D12P2C008 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) | 800 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Package Name | Module |
| Power - Max | 600 W |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
About Export Regulations
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