BSM080D12P2C008 Series
Manufacturer: Rohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 80 A, 1.2 KV, MODULE
| Part | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Package Name | Channel Count | Configuration | Configuration - Features | Power - Max | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 4 V | Chassis Mount | 80 A | Module | 2 | N-Channel | Dual | 600 W | 800 pF | 1200 V | Module | 175 °C | Silicon Carbide (SiC) |