VN10LPSTOA

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	VN10LPSTOA

Current - Continuous Drain (Id) @ 25°C	270 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3, Formed Leads
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	E-Line (TO-92 compatible)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc VN10LPSTOA	2.5 V	N-Channel	-55 °C	150 °C	270 mA	E-Line-3 Formed Leads	Through Hole	5 Ohm	10 V	5 V	60 V	20 V	625 mW	E-Line (TO-92 compatible)	MOSFET (Metal Oxide)	60 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$