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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Vgs(th) (Max) @ Id [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) [Max] | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.5 V | N-Channel | -55 °C | 150 °C | 270 mA | E-Line-3 Formed Leads | Through Hole | 5 Ohm | 10 V | 5 V | 60 V | 20 V | 625 mW | E-Line (TO-92 compatible) | MOSFET (Metal Oxide) | 60 pF |