Specification	TLP759F(D4-TP4,J,F

Current - DC Forward (If) (Max)	25 mA
Current Transfer Ratio (Min)	20 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature (Max)	100 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor with Base
Package / Case	8-SMD, Gull Wing
Package Name	8-SMD
Voltage - Forward (Vf) (Typ)	1.65 V
Voltage - Isolation	5000 Vrms

TLP759 Series

Part	Current Transfer Ratio (Min)	Package Name	Package Length	Package Width	Number of Channels	Current - DC Forward (If) (Max)	Voltage - Forward (Vf) (Typ)	Mounting Type	Output Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Voltage - Isolation	Current - Output / Channel	Package / Case	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP759F(D4IMF4,J,F	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms
Toshiba Semiconductor and Storage TLP759(D4-TP4,J,F)	20 %	8-SMD			1	25 mA	1.65 V	Surface Mount	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms	8 mA	8-SMD Gull Wing
Toshiba Semiconductor and Storage TLP759(IGM-LF5,J,F	25 %	8-SMD			1	25 mA	1.65 V	Surface Mount	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms	8 mA	8-SMD Gull Wing	75 %
Toshiba Semiconductor and Storage TLP759F(D4MBIMT4JF	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms
Toshiba Semiconductor and Storage TLP759F(D4-TP4,J,F	20 %	8-SMD			1	25 mA	1.65 V	Surface Mount	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms		8-SMD Gull Wing
Toshiba Semiconductor and Storage TLP759F(D4STIT4J,F	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms
Toshiba Semiconductor and Storage TLP759(FANUC1T1J,F	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms	8 mA
Toshiba Semiconductor and Storage TLP759F(D4MBIM,J,F	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms
Toshiba Semiconductor and Storage TLP759(D4-IGM,J,F)	25 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms	8 mA		75 %
Toshiba Semiconductor and Storage TLP759F(MATDIGMJ,F	20 %	8-DIP	0.3 in	7.62 mm	1	25 mA	1.65 V	Through Hole	Transistor with Base	-55 °C	100 °C	DC	5000 Vrms

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TLP759F(D4-TP4,J,F | Datasheet