TLP759 Series
Manufacturer: Toshiba Semiconductor and Storage
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PHOTOCOUPLER
| Part | Current Transfer Ratio (Min) | Package Name | Package Length | Package Width | Number of Channels | Current - DC Forward (If) (Max) | Voltage - Forward (Vf) (Typ) | Mounting Type | Output Type | Operating Temperature (Min) | Operating Temperature (Max) | Input Type | Voltage - Isolation | Current - Output / Channel | Package / Case | Current Transfer Ratio (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | |||
 Toshiba Semiconductor and Storage | 20 % | 8-SMD | 1 | 25 mA | 1.65 V | Surface Mount | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | 8 mA | 8-SMD Gull Wing | |||
 Toshiba Semiconductor and Storage | 25 % | 8-SMD | 1 | 25 mA | 1.65 V | Surface Mount | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | 8 mA | 8-SMD Gull Wing | 75 % | ||
Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | |||
Toshiba Semiconductor and Storage | 20 % | 8-SMD | 1 | 25 mA | 1.65 V | Surface Mount | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | 8-SMD Gull Wing | ||||
Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | |||
 Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | 8 mA | ||
Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | |||
Toshiba Semiconductor and Storage | 25 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms | 8 mA | 75 % | |
Toshiba Semiconductor and Storage | 20 % | 8-DIP | 0.3 in | 7.62 mm | 1 | 25 mA | 1.65 V | Through Hole | Transistor with Base | -55 °C | 100 °C | DC | 5000 Vrms |