TK22E10N1,S1X

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Toshiba Semiconductor and Storage

MOSFET N CH 100V 52A TO220

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Toshiba Semiconductor and Storage

MOSFET N CH 100V 52A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK22E10N1,S1X

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	72 W
Rds On (Max) @ Id, Vgs	13.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage TK22E10N1,S1X	Through Hole	20 V	72 W	10 V	13.8 mOhm	52 A	TO-220	100 V	MOSFET (Metal Oxide)	4 V	N-Channel	28 nC	1800 pF	TO-220-3	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 52A (Tc) 72W (Tc) Through Hole TO-220

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