TK22E10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
| Part | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 52 A | 28 nC | 20 V | 72 W | 13.8 mOhm 13.8 mOhm | MOSFET (Metal Oxide) | 10 V | Through Hole | 4 V | 150 °C | 1800 pF | TO-220-3 | N-Channel | 100 V | TO-220 |