STFI20N65M5

Obsolete

STMicroelectronics

MOSFET N CH 650V 18A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N CH 650V 18A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI20N65M5

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1345 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
STMicroelectronics STFI20N65M5	Through Hole	N-Channel	18 A	150 °C	1345 pF	TO-281 (I2PAKFP)	MOSFET (Metal Oxide)	650 V	5 V	45 nC	130 W	25 V	190 mOhm	10 V	TO-262-3 Full Pack I2PAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 18A (Tc) 130W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources