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MOSFET N CH 650V 18A I2PAKFP
| Part | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | Through Hole | N-Channel | 18 A | 150 °C | 1345 pF | TO-281 (I2PAKFP) | MOSFET (Metal Oxide) | 650 V | 5 V | 45 nC | 130 W | 25 V | 190 mOhm | 10 V | TO-262-3 Full Pack I2PAK |