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CSD13383F4T - CSDxxxxF4T

CSD13383F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

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CSD13383F4T - CSDxxxxF4T

CSD13383F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD13383F4TCSD13383F4 Series
Current - Continuous Drain (Id) @ 25°C2.9 A2.9 A
Drain to Source Voltage (Vdss)12 V12 V
Drive Voltage (Max Rds On, Min Rds On)2.5 V, 4.5 V2.5 - 4.5 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs2.6 nC2.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]291 pF291 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / Case3-XFDFN3-XFDFN
Power Dissipation (Max) [Max]500 mW500 mW
Rds On (Max) @ Id, Vgs [Max]44 mOhm44 mOhm
Supplier Device Package3-PICOSTAR3-PICOSTAR
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max) [Max]10 V10 V
Vgs (Max) [Min]-10 V-10 V
Vgs(th) (Max) @ Id1.25 V1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Arrow ElectronicsCut Strips 0$ 0.33
1$ 0.26
10$ 0.26
25$ 0.26
100$ 0.25
DigiKeyDigi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1$ 1.41
10$ 0.89
100$ 0.59
250$ 0.46
500$ 0.42
750$ 0.40
1250$ 0.37
1750$ 0.36
2500$ 0.35
6250$ 0.33
DigikeyCut Tape (CT) 1$ 0.61
10$ 0.50
100$ 0.39
Digi-Reel® 1$ 0.61
10$ 0.50
100$ 0.39
Tape & Reel (TR) 250$ 0.38
500$ 0.33
1250$ 0.33
Mouser ElectronicsN/A 1$ 0.73
10$ 0.66
100$ 0.40
250$ 0.40
500$ 0.38
1000$ 0.35
2500$ 0.34
5000$ 0.33
25000$ 0.32
TMEN/A 1$ 0.73
10$ 0.60
50$ 0.53
100$ 0.50
250$ 0.47
500$ 0.45
Texas InstrumentsSMALL T&R 1$ 0.75
100$ 0.51
250$ 0.39
1000$ 0.26
VericalN/A 18$ 0.26
25$ 0.26
100$ 0.25

CSD13383F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

PartTechnologyPackage / CaseSupplier Device PackageRds On (Max) @ Id, Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max) [Max]Operating Temperature [Max]Operating Temperature [Min]Mounting TypeDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ Vds [Max]FET TypeCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ IdVgs (Max) [Max]Vgs (Max) [Min]
Texas Instruments
CSD13383F4
MOSFET (Metal Oxide)
3-XFDFN
3-PICOSTAR
44 mOhm
2.5 V, 4.5 V
500 mW
150 °C
-55 °C
Surface Mount
12 V
291 pF
N-Channel
2.9 A
2.6 nC
1.25 V
10 V
-10 V
Texas Instruments
CSD13383F4T
MOSFET (Metal Oxide)
3-XFDFN
3-PICOSTAR
44 mOhm
2.5 V, 4.5 V
500 mW
150 °C
-55 °C
Surface Mount
12 V
291 pF
N-Channel
2.9 A
2.6 nC
1.25 V
10 V
-10 V

Description

General part information

CSD13383F4 Series

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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