IXTQ110N055P

Obsolete

IXYS

MOSFET N-CH 55V 110A TO3P

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Obsolete

IXYS

MOSFET N-CH 55V 110A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ110N055P

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	2210 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	390 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Technology	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTQ110N055P	MOSFET (Metal Oxide)	N-Channel	5.5 V	390 W	10 V	55 V	76 nC	20 V	-55 °C	175 ░C	Through Hole	SC-65-3 TO-3P-3	110 A	13.5 mOhm	TO-3P	2210 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 110A (Tc) 390W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available