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MOSFET N-CH 55V 110A TO3P
| Part | Technology | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | N-Channel | 5.5 V | 390 W | 10 V | 55 V | 76 nC | 20 V | -55 °C | 175 ░C | Through Hole | SC-65-3 TO-3P-3 | 110 A | 13.5 mOhm | TO-3P | 2210 pF |