IRLHS6276TR2PBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

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Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRLHS6276TR2PBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.1 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Package / Case	6-PowerVDFN
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	6-PQFN Dual (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRLHS6276TR2PBF	45 mOhm	Logic Level Gate	310 pF	1.5 W	6-PQFN Dual (2x2)	3.1 nC	4.5 A	2 N-Channel (Dual)	6-PowerVDFN	Surface Mount	1.1 V	MOSFET (Metal Oxide)	20 V
Infineon Technologies IRLHS6276TRPBF	45 mOhm	Logic Level Gate	310 pF	1.5 W	6-PQFN Dual (2x2)	3.1 nC	4.5 A	2 N-Channel (Dual)	6-PowerVDFN	Surface Mount	1.1 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.5A 1.5W Surface Mount 6-PQFN Dual (2x2)

Technical documentation and resources