MOSFET 2N-CH 20V 4.5A PQFN
| Part | Rds On (Max) @ Id, Vgs | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 45 mOhm | Logic Level Gate | 310 pF | 1.5 W | 6-PQFN Dual (2x2) | 3.1 nC | 4.5 A | 2 N-Channel (Dual) | 6-PowerVDFN | Surface Mount | 1.1 V | MOSFET (Metal Oxide) | 20 V | ||
Infineon Technologies | 45 mOhm | Logic Level Gate | 310 pF | 1.5 W | 6-PQFN Dual (2x2) | 3.1 nC | 4.5 A | 2 N-Channel (Dual) | 6-PowerVDFN | Surface Mount | 1.1 V | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C |