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EPC2016 - EPC2016_RY

EPC2016

Unknown
EPC

GANFET N-CH 100V 11A DIE

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EPC2016 - EPC2016_RY

EPC2016

Unknown
EPC

GANFET N-CH 100V 11A DIE

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationEPC2016EPC20 Series
Current - Continuous Drain (Id) @ 25¯C-3 A
Current - Continuous Drain (Id) @ 25°C11 A1.7 - 500 A
Current - Continuous Drain (Id) @ 25░C-31 A
Drain to Source Voltage (Vdss)100 V15 - 350 V
Drive Voltage (Max Rds On, Min Rds On)5 V5 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs5.2 nC0.12 - 18 nC
Gate Charge (Qg) (Max) @ Vgs-0.044 - 33 nC
Input Capacitance (Ciss) (Max) @ Vds-8.4 - 4523 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]520 pF115 - 3267 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]125 ¯C125 - 150 °C
Operating Temperature [Min]-40 °C-40 °C
Package / CaseDieDie
Rds On (Max) @ Id, Vgs-1.1 - 550 mOhm
Rds On (Max) @ Id, Vgs [Max]16 mOhm1.5 - 45 mOhm
Supplier Device PackageDieDie
TechnologyGaNFET (Gallium Nitride)GaNFET (Gallium Nitride)
Vgs (Max) [Max]6 V6 V
Vgs (Max) [Min]-5 V-5 - -4 V
Vgs(th) (Max) @ Id2.5 V2.5 V
Vgs(th) (Max) @ Id-2.5 V

EPC20 Series

GANFET N-CH 200V 48A DIE

PartCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Mounting TypeDrain to Source Voltage (Vdss)Package / CaseTechnologyVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ Vds [Max]Operating Temperature [Max]Operating Temperature [Min]Vgs (Max) [Max]Vgs (Max) [Min]FET TypeRds On (Max) @ Id, VgsSupplier Device PackageInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, Vgs [Max]Gate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ Id [Max]Current - Continuous Drain (Id) @ 25░CCurrent - Continuous Drain (Id) @ 25¯C
EPC
EPC2034
48 A
8.8 nC
Surface Mount
200 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
950 pF
150 °C
-40 °C
6 V
-4 V
N-Channel
10 mOhm
Die
EPC
EPC2044
9.4 A
Surface Mount
100 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
150 °C
-40 °C
6 V
-4 V
N-Channel
Die
664 pF
10.5 mOhm
EPC
EPC2024
90 A
Surface Mount
40 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
2100 pF
150 °C
-40 °C
6 V
-4 V
N-Channel
Die
1.5 mOhm
EPC
EPC2052
8.2 A
Surface Mount
100 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
150 °C
-40 °C
6 V
-4 V
N-Channel
13.5 mOhm
Die
575 pF
4.5 nC
EPC
EPC2030
31 A
Surface Mount
40 V
Die
GaNFET (Gallium Nitride)
2.5 V
1900 pF
150 °C
-40 °C
N-Channel
2.4 mOhm
Die
18 nC
EPC
EPC2016
11 A
Surface Mount
100 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
520 pF
125 ¯C
-40 °C
6 V
-5 V
N-Channel
Die
16 mOhm
5.2 nC
EPC
EPC2065
60 A
Surface Mount
80 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
150 °C
-40 °C
6 V
-4 V
N-Channel
3.6 mOhm
Die
12.2 nC
EPC
EPC2039
2.4 nC
Surface Mount
80 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
150 °C
-40 °C
6 V
-4 V
N-Channel
25 mOhm
Die
210 pF
EPC
EPC2023
60 A
Surface Mount
30 V
Die
GaNFET (Gallium Nitride)
N-Channel
1.3 mOhm
Die
2300 pF
EPC
EPC2055
29 A
8.5 nC
Surface Mount
40 V
Die
GaNFET (Gallium Nitride)
2.5 V
5 V
150 °C
-40 °C
6 V
-4 V
N-Channel
3.6 mOhm
Die
1111 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

EPC20 Series

N-Channel 100 V 11A (Ta) Surface Mount Die

Documents

Technical documentation and resources

Datasheet

Datasheet