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STP20NM60A - TO-220-3

STP20NM60A

Obsolete
STMicroelectronics

MOSFET N-CH 650V 20A TO220AB

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STP20NM60A - TO-220-3

STP20NM60A

Obsolete
STMicroelectronics

MOSFET N-CH 650V 20A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP20NM60A
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds1630 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)192 W
Rds On (Max) @ Id, Vgs290 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STP20N Series

N-Channel 650 V 20A (Tc) 192W (Tc) Through Hole TO-220

Documents

Technical documentation and resources