MOSFET N-CH 650V 20A TO220AB
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 4 V | 192 W | N-Channel | 30 V | TO-220 | 20 A | 650 V | MOSFET (Metal Oxide) | 1630 pF | -55 °C | 150 °C | 290 mOhm | 10 V | TO-220-3 | 60 nC | Through Hole | |||
STMicroelectronics | 4 V | 125 W | N-Channel | 25 V | TO-220 | 15 A | 650 V | MOSFET (Metal Oxide) | 1280 pF | 270 mOhm | 10 V | TO-220-3 | 44 nC | Through Hole | 150 °C | ||||
STMicroelectronics | 4 V | 60 W | N-Channel | 20 V | TO-220 | 20 A | 60 V | MOSFET (Metal Oxide) | 400 pF | -55 °C | 175 ░C | 70 mOhm | 10 V | TO-220-3 | 18 nC | Through Hole | |||
STMicroelectronics | 5 V | 45 W | N-Channel | 30 V | TO-220FP | 20 A | 550 V | MOSFET (Metal Oxide) | 1480 pF | -65 °C | 150 °C | 10 V | TO-220-3 Full Pack | Through Hole | 250 mOhm | 56 nC |