TK100S04N1L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK100S04N1L,LXHQ

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	5490 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage TK100S04N1L,LXHQ	180 W	5490 pF	Surface Mount	100 A	N-Channel	2.3 mOhm	40 V	MOSFET (Metal Oxide)	4.5 V 10 V	76 nC	DPAK+	2.5 V	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V

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General part information

N-Channel 40 V 100A (Ta) 180W (Tc) Surface Mount DPAK+

Technical documentation and resources