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⌘K
MOSFET N-CH 40V 100A DPAK
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 180 W | 5490 pF | Surface Mount | 100 A | N-Channel | 2.3 mOhm | 40 V | MOSFET (Metal Oxide) | 4.5 V 10 V | 76 nC | DPAK+ | 2.5 V | 175 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V |