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STD5NK40Z-1 - TO-251-3

STD5NK40Z-1

Active
STMicroelectronics

N-CHANNEL 400 V, 1.45 OHM TYP., 3 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

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Search across all available documentation for this part.

DocumentsAN2842+18
STD5NK40Z-1 - TO-251-3

STD5NK40Z-1

Active
STMicroelectronics

N-CHANNEL 400 V, 1.45 OHM TYP., 3 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsAN2842+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD5NK40Z-1
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds305 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs [Max]1.8 Ohm
Supplier Device PackageTO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.10
75$ 0.89
150$ 0.70
525$ 0.59
1050$ 0.59
NewarkEach 1$ 1.40
10$ 0.98
150$ 0.77
525$ 0.67
1050$ 0.58
2550$ 0.48
10050$ 0.46

Description

General part information

STD5NK40Z-1 Series

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.