STD5NK40Z-1 Series

N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package

Catalog

N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package

Part	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD5NK40Z-1	TO-251 (IPAK)	MOSFET (Metal Oxide)	1.8 Ohm	-55 °C	150 °C	45 W	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	3 A	N-Channel	30 V	10 V	305 pF	400 V	4.5 V	17 nC
STMicroelectronics STD5NK40ZT4	DPAK	MOSFET (Metal Oxide)	1.8 Ohm	-55 °C	150 °C	45 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	3 A	N-Channel	30 V	10 V	305 pF	400 V	4.5 V	17 nC

Catalog

N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.