SSM6J206FE(TE85L,F

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A ES6

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J206FE(TE85L,F

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	335 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Toshiba Semiconductor and Storage SSM6J206FE(TE85L,F	2 A	MOSFET (Metal Oxide)	335 pF	Surface Mount	500 mW	1 V	150 °C	130 mOhm	SOT-563 SOT-666	8 V	P-Channel	20 V	1.8 V 4 V	ES6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources