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MOSFET P-CH 20V 2A ES6
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Operating Temperature | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 A | MOSFET (Metal Oxide) | 335 pF | Surface Mount | 500 mW | 1 V | 150 °C | 130 mOhm | SOT-563 SOT-666 | 8 V | P-Channel | 20 V | 1.8 V 4 V | ES6 |