Zenode.ai Logo
DS1258W-100IND# - 40-DIP

DS1258W-100IND#

Active
Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 40EDIP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
DS1258W-100IND# - 40-DIP

DS1258W-100IND#

Active
Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 40EDIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationDS1258W-100IND#DS1258W Series
Access Time100 ns100 - 150 ns
Memory FormatNVSRAMNVSRAM
Memory InterfaceParallelParallel
Memory Size2 Gbit2 Gbit
Memory TypeNon-VolatileNon-Volatile
Mounting TypeThrough HoleThrough Hole
Operating Temperature [Max]85 °C70 - 85 °C
Operating Temperature [Min]-40 °C-40 - 0 °C
Package / Case0.61 "0.61 "
Package / Case40-DIP Module40-DIP Module
Package / Case15.495 mm15.495 mm
Supplier Device Package40-EDIP40-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]3.6 V3.6 V
Voltage - Supply [Min]3 V3 V
Write Cycle Time - Word, Page-150 ns
Write Cycle Time - Word, Page [custom]100 ns100 ns
Write Cycle Time - Word, Page [custom]100 ns100 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

DS1258W Series

IC NVSRAM 2MBIT PARALLEL 40EDIP

PartTechnologyVoltage - Supply [Max]Voltage - Supply [Min]Package / CasePackage / CasePackage / CaseMemory InterfaceSupplier Device PackageMemory FormatWrite Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]Memory TypeOperating Temperature [Max]Operating Temperature [Min]Memory SizeMounting TypeAccess TimeWrite Cycle Time - Word, Page
Analog Devices Inc./Maxim Integrated
DS1258W-100
NVSRAM (Non-Volatile SRAM)
3.6 V
3 V
0.61 "
40-DIP Module
15.495 mm
Parallel
40-EDIP
NVSRAM
100 ns
100 ns
Non-Volatile
70 °C
0 °C
2 Gbit
Through Hole
100 ns
Analog Devices Inc./Maxim Integrated
DS1258W-100IND#
NVSRAM (Non-Volatile SRAM)
3.6 V
3 V
0.61 "
40-DIP Module
15.495 mm
Parallel
40-EDIP
NVSRAM
100 ns
100 ns
Non-Volatile
85 °C
-40 °C
2 Gbit
Through Hole
100 ns
Analog Devices Inc./Maxim Integrated
DS1258W-150
NVSRAM (Non-Volatile SRAM)
3.6 V
3 V
0.61 "
40-DIP Module
15.495 mm
Parallel
40-EDIP
NVSRAM
Non-Volatile
70 °C
0 °C
2 Gbit
Through Hole
150 ns
150 ns
Analog Devices Inc./Maxim Integrated
DS1258W-150#
NVSRAM (Non-Volatile SRAM)
3.6 V
3 V
0.61 "
40-DIP Module
15.495 mm
Parallel
40-EDIP
NVSRAM
Non-Volatile
70 °C
0 °C
2 Gbit
Through Hole
150 ns
150 ns

Description

General part information

DS1258W Series

NVSRAM (Non-Volatile SRAM) Memory IC 2Mbit Parallel 100 ns 40-EDIP

Documents

Technical documentation and resources