IC NVSRAM 2MBIT PARALLEL 40EDIP
Part | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case | Package / Case | Memory Interface | Supplier Device Package | Memory Format | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size | Mounting Type | Access Time | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1258W-100 | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.61 " | 40-DIP Module | 15.495 mm | Parallel | 40-EDIP | NVSRAM | 100 ns | 100 ns | Non-Volatile | 70 °C | 0 °C | 2 Gbit | Through Hole | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1258W-100IND# | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.61 " | 40-DIP Module | 15.495 mm | Parallel | 40-EDIP | NVSRAM | 100 ns | 100 ns | Non-Volatile | 85 °C | -40 °C | 2 Gbit | Through Hole | 100 ns | |
Analog Devices Inc./Maxim Integrated DS1258W-150 | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.61 " | 40-DIP Module | 15.495 mm | Parallel | 40-EDIP | NVSRAM | Non-Volatile | 70 °C | 0 °C | 2 Gbit | Through Hole | 150 ns | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1258W-150# | NVSRAM (Non-Volatile SRAM) | 3.6 V | 3 V | 0.61 " | 40-DIP Module | 15.495 mm | Parallel | 40-EDIP | NVSRAM | Non-Volatile | 70 °C | 0 °C | 2 Gbit | Through Hole | 150 ns | 150 ns |