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2N7002E-7-F-79 - SOT-23-3

2N7002E-7-F-79

Obsolete
Diodes Inc

DIODE

Deep-Dive with AI

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2N7002E-7-F-79 - SOT-23-3

2N7002E-7-F-79

Obsolete
Diodes Inc

DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N7002E-7-F-79
Current - Continuous Drain (Id) @ 25°C250 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.23 nC
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs3 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

2N7002DWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management functions.

Documents

Technical documentation and resources

No documents available