2N7002-13-F

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3

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2N7002-13-F

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3

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Technical Specifications

Parameters and characteristics for this part

Specification	2N7002-13-F

Current - Continuous Drain (Id) @ 25°C	170 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.23 nC
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

2N7002DWQ Series

Dual N-Channel Enhancement Mode MOSFET

Part	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification	Power - Max [Max]	Configuration
Diodes Inc 2N7002WKX-13	N-Channel	7.5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SC-70 SOT-323	20 V	2 V	200 mW	115 mA	-55 °C	150 °C	Surface Mount	10 V	5 V	SOT-323
Diodes Inc 2N7002T-7-F-79	N-Channel	7.5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SOT-523	20 V	2 V		115 mA	-55 °C	150 °C	Surface Mount	10 V	5 V	SOT-523	150 mW
Diodes Inc 2N7002-13-F	N-Channel	5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		170 mA	-55 °C	150 °C	Surface Mount	10 V	5 V	SOT-23-3		0.23 nC
Diodes Inc 2N7002EQ-7-F	N-Channel	3 Ohm	60 V	35 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		292 mA	-55 °C	150 °C	Surface Mount			SOT-23-3	500 mW		4.5 V 10 V	Automotive	0.5 nC	AEC-Q101
Diodes Inc 2N7002DWK-7		3 Ohm	60 V	41 pF	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363		2 V		261 mA	-55 °C	150 °C	Surface Mount			SOT-363					1.04 nC		330 mW	2 N-Channel (Dual)
Diodes Inc 2N7002DWQ-13-F		7.5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363		2 V		230 mA	-55 °C	150 °C	Surface Mount			SOT-363				Automotive		AEC-Q101	310 mW	2 N-Channel (Dual)
Diodes Inc 2N7002H-13	N-Channel	7.5 Ohm	60 V	26 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	3 V		170 mA	-55 °C	150 °C	Surface Mount			SOT-23-3		0.35 nC	5 V
Diodes Inc 2N7002E-7-F-79	N-Channel	3 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		250 mA	-55 °C	150 °C	Surface Mount			SOT-23-3		0.23 nC	4.5 V 10 V
Diodes Inc 2N7002-7-F	N-Channel	7.5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		115 mA	-55 °C	150 °C	Surface Mount	10 V	5 V	SOT-23-3
Diodes Inc 2N7002W-7-F	N-Channel	7.5 Ohm	60 V	50 pF	MOSFET (Metal Oxide)	SC-70 SOT-323	20 V	2 V	200 mW	115 mA	-55 °C	150 °C	Surface Mount	10 V	5 V	SOT-323

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

2N7002DWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management functions.

2N7002-13-F

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2N7002-13-F

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Technical Specifications

2N7002DWQ Series

Pricing

Description

2N7002DWQ Series

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Datasheet

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2N7002DWQ Series