CSD13202Q2
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 9.3 MOHM
CSD13202Q2
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 9.3 MOHM
Description
General part information
CSD13202 Series
This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.
This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD13202Q2 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 22 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.6 nC |
| Input Capacitance (Ciss) (Max) | 997 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-WDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-WSON |
| Package Width | 2 mm |
| Power Dissipation (Max) | 2.7 W |
| Rds On (Max) | 9.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.1 V |
Pricing
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