DMN31D5L-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN31D5L-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN31D5L-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 350 mW |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.28 | |
| 10 | $ 0.17 | |||
| 100 | $ 0.11 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
| 2000 | $ 0.06 | |||
| 5000 | $ 0.05 | |||
| Digi-Reel® | 1 | $ 0.28 | ||
| 10 | $ 0.17 | |||
| 100 | $ 0.11 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
| 2000 | $ 0.06 | |||
| 5000 | $ 0.05 | |||
| Tape & Reel (TR) | 10000 | $ 0.05 | ||
| 20000 | $ 0.04 | |||
| 30000 | $ 0.04 | |||
| 50000 | $ 0.04 | |||
| 70000 | $ 0.04 | |||
| 100000 | $ 0.04 | |||
| 250000 | $ 0.03 | |||
Description
General part information
DMN31D5L Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources