DMN31D5L Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs
Diodes Inc DMN31D5L-13	1.6 V	SOT-23-3	350 mW	50 pF	MOSFET (Metal Oxide)	Surface Mount	30 V	500 mA	1.2 nC	4 V	2.5 V	20 V	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	N-Channel	1.5 Ohm

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.