IRF1010NSTRLPBF

LTB

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11 MOHM;

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IRF1010NSTRLPBF

LTB

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11 MOHM;

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF1010 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010NSTRLPBF

Current - Continuous Drain (Id) (Tc)	85 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	120 nC
Input Capacitance (Ciss) (Max)	3210 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	180 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF1010 Series

Part	Power Dissipation (Max)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Mounting Type	Drain to Source Voltage (Vdss)
INFINEON IRF1010EZPBF	140 W	TO-220-3	20 V	75 A	4 V	N-Channel	2810 pF	86 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	8.5 mOhm	Through Hole	60 V
INFINEON IRF1010ZSTRLPBF	140 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	75 A	4 V	N-Channel	2840 pF	95 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	7.5 mOhm	Surface Mount	55 V
INFINEON IRF1010NSTRLPBF	180 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	85 A	4 V	N-Channel	3210 pF	120 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	11 mOhm	Surface Mount	55 V
INFINEON IRF1010EPBF	200 W	TO-220-3	20 V	84 A	4 V	N-Channel	3210 pF	130 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	12 mOhm	Through Hole	60 V
INFINEON IRF1010NPBF	180 W	TO-220-3	20 V	85 A	4 V	N-Channel	3210 pF	120 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	11 mOhm	Through Hole	55 V
INFINEON IRF1010ESTRLPBF	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	84 A	4 V	N-Channel	3210 pF	130 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	12 mOhm	Surface Mount	60 V
INFINEON IRF1010EZSTRLP	140 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	75 A	4 V	N-Channel	2810 pF	86 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	8.5 mOhm	Surface Mount	60 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MOSFET OptiMOS™ datasheet explanation (PDF)

IRF1010NSTRLPBF | Datasheet

IR Part Numbering System

Application Note EN