IRF1010EPBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 60 V, 84 A, 0.012 OHM, TO-220AB, THROUGH HOLE

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IRF1010EPBF

NRND

INFINEON

POWER MOSFET, N CHANNEL, 60 V, 84 A, 0.012 OHM, TO-220AB, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRF1010 Series

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010EPBF

Current - Continuous Drain (Id) (Tc)	84 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	130 nC
Input Capacitance (Ciss) (Max)	3210 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	200 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF1010 Series

Part	Power Dissipation (Max)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Mounting Type	Drain to Source Voltage (Vdss)
INFINEON IRF1010EZPBF	140 W	TO-220-3	20 V	75 A	4 V	N-Channel	2810 pF	86 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	8.5 mOhm	Through Hole	60 V
INFINEON IRF1010ZSTRLPBF	140 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	75 A	4 V	N-Channel	2840 pF	95 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	7.5 mOhm	Surface Mount	55 V
INFINEON IRF1010NSTRLPBF	180 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	85 A	4 V	N-Channel	3210 pF	120 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	11 mOhm	Surface Mount	55 V
INFINEON IRF1010EPBF	200 W	TO-220-3	20 V	84 A	4 V	N-Channel	3210 pF	130 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	12 mOhm	Through Hole	60 V
INFINEON IRF1010NPBF	180 W	TO-220-3	20 V	85 A	4 V	N-Channel	3210 pF	120 nC	MOSFET (Metal Oxide)	TO-220AB	-55 °C	175 °C	10 V	11 mOhm	Through Hole	55 V
INFINEON IRF1010ESTRLPBF	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	84 A	4 V	N-Channel	3210 pF	130 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	12 mOhm	Surface Mount	60 V
INFINEON IRF1010EZSTRLP	140 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	75 A	4 V	N-Channel	2810 pF	86 nC	MOSFET (Metal Oxide)	D2PAK	-55 °C	175 °C	10 V	8.5 mOhm	Surface Mount	60 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IRF1010EPBF | Datasheet

IR Part Numbering System