IRF7493TRPBF

Active

Infineon Technologies

MOSFET, N-CH, 80V, 9.3A, SOIC

Search across all available documentation for this part.

Active

Infineon Technologies

MOSFET, N-CH, 80V, 9.3A, SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7493TRPBF

Current - Continuous Drain (Id) @ 25°C	9.3 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Supplier Device Package	FET Type	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies IRF7493TRPBF	2.5 W	1510 pF	9.3 A	4 V	15 mOhm	-55 °C	150 °C	80 V	10 V	53 nC	Surface Mount	MOSFET (Metal Oxide)	8-SO	N-Channel	20 V	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 9.3A (Tc) 2.5W (Tc) Surface Mount 8-SO

Technical documentation and resources