Beta
⌘K
MOSFET, N-CH, 80V, 9.3A, SOIC
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology | Supplier Device Package | FET Type | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.5 W | 1510 pF | 9.3 A | 4 V | 15 mOhm | -55 °C | 150 °C | 80 V | 10 V | 53 nC | Surface Mount | MOSFET (Metal Oxide) | 8-SO | N-Channel | 20 V | 8-SOIC | 3.9 mm | 0.154 in |